IRF640 vs IRF740: What is the difference?
MOSFET Explained / Description IRF740 is a high voltage N channel MOSFET, the transistor is basically designed for high voltage and high-speed switching applications. The max load voltage this transistor can drive is up to 400V with a maximum load current of 10A. The maximum current in pulse mode is 40A and the on-resistance or (RDS) is 0.55 ohms. The max drain to source voltage of 400V makes it ideal to drive a variety of high voltage loads in electronic circuits. IRF640 is an N Channel MOSFET designed for high-speed switching purposes. This high-speed switching capability can be very useful in applications where switching speed is crucial, for example in a UPS circuit or in any other application where the user wants to change the load input power from one source to another. The transistor is capable of driving a load of up to 18A and the voltage can be up to 200V with the minimum saturation voltage of only 2V to 4v at its gate. The pulsed drain current is 72A means this MOSFET ...